Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …
unraveling the different causes behind this phenomenon. Among them, oxygen related …
Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
The influence of top and bottom metal electrodes on ferroelectricity of hafnia
In recent years, several experimental approaches have been adopted to study and
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
In this study, resistive random-access memory (RRAM)-based crossbar arrays with a
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak… - …, 2019 - iopscience.iop.org
Artificial synapse having good linearity is crucial to achieve an efficient learning process in
neuromorphic computing. It is found that the synaptic linearity can be enhanced by …
neuromorphic computing. It is found that the synaptic linearity can be enhanced by …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
This work reports on the bipolar resistive switching (RS) characteristics and possible
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
Interface-engineered reliable HfO 2-based RRAM for synaptic simulation
Future synaptic simulation using resistance random access memory (RRAM) requires higher
reliability and lower power consumption of the devices and understanding of the correlation …
reliability and lower power consumption of the devices and understanding of the correlation …
Improved memory performance of ALD grown HfO2 films by nitrogen doping
Resistive switching devices have shown potential in storage class memory and artificial
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
CF Liu, XG Tang, LQ Wang, H Tang, YP Jiang, QX Liu… - Nanomaterials, 2019 - mdpi.com
The resistive switching (RS) characteristics of flexible films deposited on mica substrates
have rarely been reported upon, especially flexible HfO2 films. A novel flexible …
have rarely been reported upon, especially flexible HfO2 films. A novel flexible …