A generalized method of analysis for avalanche noise in mixed tunneling and avalanche
transit time (MITATT) diode is reported. This method can be applied to MITATT diodes with …

A generalized method of DC and high-frequency analysis for microwave transit time diodes
in mixed tunnelling and avalanche mode, which can be applied to any type of diode …

The results of accurate and realistic high-frequency numerical analysis of a silicon DAR
(double avalanche region) diode indicate some unique and useful microwave …

The influence of self-heating on the millimeter-wave (mm-wave) and terahertz (THz)
performance of double-drift region (DDR) impact avalanche transit time (IMPATT) sources …

The role of electron and hole saturation currents in controlling the millimeter‐wave (mm‐
wave) properties of silicon and GaAs double drift region (DDR) high‐efficiency (low‐high …

The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-
wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both …

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density
and dependence on structural parameters Page 1 Semiconductor Science and Technology …

Great demand of suitable terahertz (THz) sources requires optimized design and
appropriate simulation tool for designing and investigating the device capability at the …

This chapter describes the procedure of estimating the degree of deterioration of the
performance of avalanche transit time (ATT) sources due to instantaneous tunneling effect …

This paper highlights the effect of temperature on the high-frequency performance of the
double avalanche region avalanche transit time (ATT) source capable of operating in …