Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz
This letter reports the first millimeter-wave power demonstration of AlGaN/GaN high-electron-
mobility transistors grown on a (110) silicon substrate. Owing to an AlN/AlGaN stress …
mobility transistors grown on a (110) silicon substrate. Owing to an AlN/AlGaN stress …
GaN on engineered bulk Si (GaN-on-EBUS) substrate for monolithic integration of high-/low-side switches in bridge circuits
A cost-effective engineered bulk silicon (EBUS) substrate technology is presented, featuring
pn junction implemented on bulk Si substrates using mainstream ion implantation and …
pn junction implemented on bulk Si substrates using mainstream ion implantation and …
Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si (110) and Si (111) substrates by plasma-assisted molecular …
XQ Shen, T Takahashi, X Rong, G Chen… - Applied Physics …, 2013 - pubs.aip.org
We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain
engineering of the GaN films grown on Si (110) and Si (111) substrates by plasma-assisted …
engineering of the GaN films grown on Si (110) and Si (111) substrates by plasma-assisted …
Photoluminescence spectra of nitrogen-rich InN thin films grown on Si (110) and photoelectrochemical etched Si (110)
Indium nitride (InN) thin films were deposited on anisotropic silicon [Si (110)] and
photoelectrochemical etched silicon [Psi (110)] substrates by reactive radio-frequency …
photoelectrochemical etched silicon [Psi (110)] substrates by reactive radio-frequency …
Substrate and trench design for GaN-on-EBUS power IC platform
A GaN on engineered bulk silicon (GaN-on-EBUS) power IC platform has been recently
proposed and demonstrated. This platform adopts pn junctions embedded in bulk Si …
proposed and demonstrated. This platform adopts pn junctions embedded in bulk Si …
Comparative study on structural and optical properties of nitrogen rich InN on Si (110) and 6H-SiC
Nitrogen rich indium nitride (InN) thin films were deposited on anisotropic silicon [Si (110)]
and 6H-silicon carbide (6H-SiC) substrates by reactive radio frequency sputtering technique …
and 6H-silicon carbide (6H-SiC) substrates by reactive radio frequency sputtering technique …
Effect of deposition conditions on properties of nitrogen rich-InN nanostructures grown on anisotropic Si (110)
Nanocrystalline InN were fabricated on anisotropic silicon [Si (110)] substrates by reactive
radio frequency sputtering. The effects of deposition conditions on the InN film …
radio frequency sputtering. The effects of deposition conditions on the InN film …
Microstructure of gallium nitride films grown on silicon (110)
F Ruiz-Zepeda, O Contreras, A Dadgar… - Applied Physics …, 2010 - pubs.aip.org
The microstructure of GaN layers grown on Si (110) is studied by transmission electron
microscopy. The GaN layers were grown by metal-organic vapor phase epitaxy using low …
microscopy. The GaN layers were grown by metal-organic vapor phase epitaxy using low …
InN Photoconductors on different orientations of Si substrates
We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF)
sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at …
sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at …
Fabrication and characterization of ZnO-based microcavities working in the strong coupling regime: polariton laser
F Li - 2013 - theses.hal.science
Cavity polaritons are quasi-particles, partially light partially matter, resulting from the strong-
coupling of an exciton and a cavity photon. At a certain temperature and particle density …
coupling of an exciton and a cavity photon. At a certain temperature and particle density …