In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

This article proposes a quasi-physical equivalent circuit model of RF leakage current in the
substrate including temperature dependence for GaN-high-electron-mobility transistor …

This paper aims to present an IoT-based wearable health monitoring device and medical
emergency response system to improve healthcare services. The wearable device collects …

Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize
T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX …

Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-
modules for 5G and 6G applications. The main contribution to RF losses is the interface …

Every industry will adopt technology to carry out its operations so that progress can occur.
However, one industry is the urban agriculture industry, which is a sure thing in …

To build a strong economy, Maharashtra must develop its agriculture, empower farmers, and
use technologies such as e-agriculture and online marketing. Farmers lose yield and …

De stijgende complexiteit van onze moderne communicatiesystemen heeft een optimalisatie
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …

Due to the lack of efficient transportation and infrastructure, 16% of the fruits and vegetables
are wasted annually. To avoid this wastage, this paper proposes a website with a hardware …

With the advance in telecommunication technologies, the world needs better and better
power amplifiers. To this end non-conventional transistors (HEMT) have been developed …