[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
Natural band alignment of BAlN and BGaN alloys
The natural band alignment of BAlN and BGaN alloys was investigated using the atomic
solid-state energy scale approach. The band edge positions relative to the vacuum level …
solid-state energy scale approach. The band edge positions relative to the vacuum level …
Phase degradation in BxGa1− xN films grown at low temperature by metalorganic vapor phase epitaxy
Using metalorganic vapor phase epitaxy, a comprehensive study of B x Ga 1− x N growth on
GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure …
GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure …
The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer
L Geng, H Zhao, T Han, X Ren - Solid State Communications, 2021 - Elsevier
This work studies the lattice-matched AlInN/GaN high-electron mobility transistor (HEMT)
with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory …
with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory …
Thermodynamics of boron incorporation in BGaN
We study the thermodynamics of boron (B) incorporation into gallium nitride (GaN) using first-
principles calculations. In the dilute limit, we have calculated the formation energies of …
principles calculations. In the dilute limit, we have calculated the formation energies of …
Optical and structural properties of BGaN layers grown on different substrates
Growth of BGaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using
triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN …
triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN …
Morphology and carrier mobility of high-B-content B x Al 1− x N ternary alloys from an ab initio global search
The excellent properties of III-nitrides and their alloys have led to significant applications in
optoelectronic devices. Boron, the lightest IIIA group element, makes it possible to extend …
optoelectronic devices. Boron, the lightest IIIA group element, makes it possible to extend …
Insights on boron impact on structural characteristics in epitaxially grown BGaN
EB Możdżyńska, S Złotnik, P Ciepielewski… - Journal of Materials …, 2022 - Springer
It is shown that MOCVD growth allows to obtain BGaN epitaxial layers at growth temperature
(T gr) between 840 and 1090° C. It is found that morphology of the epitaxial layers and …
(T gr) between 840 and 1090° C. It is found that morphology of the epitaxial layers and …
[HTML][HTML] Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy
Incorporating boron into gallium nitride to make B x Ga 1-x N solid solutions would create an
avenue for extreme alloys due to the fact that wurtzite phase BN has a larger band gap and …
avenue for extreme alloys due to the fact that wurtzite phase BN has a larger band gap and …
The effects of low boron incorporation on the structural and optical properties of BxGa1− xN/SiC epitaxial layers
BGaN epilayers with boron contents up to 5.6% were grown on SiC substrates by metal–
organic chemical vapor deposition. The effects of boron incorporation on the structural and …
organic chemical vapor deposition. The effects of boron incorporation on the structural and …