Oxides for Rectenna technology
The quest to harvest untapped renewable infrared energy sources has led to significant
research effort in design, fabrication and optimization of a self-biased rectenna that can …
research effort in design, fabrication and optimization of a self-biased rectenna that can …
[HTML][HTML] Work function lowering of LaB6 by monolayer hexagonal boron nitride coating for improved photo-and thermionic-cathodes
We report a lowering of work function for lanthanum hexaboride (LaB6) by monolayer
hexagonal boron nitride (hBN) coating. Photoemission electron microcopy (PEEM) and …
hexagonal boron nitride (hBN) coating. Photoemission electron microcopy (PEEM) and …
LaFe1–xCoxO3 Perovskite Nanoparticles Supported on Ni(OH)2 as Electrocatalyst for the Oxygen Evolution Reaction
Multifunctional ABO3 perovskite oxide nanomaterial was found to be an exceptional
electrocatalyst for the oxygen evolution reaction (OER), a key anodic reaction in water …
electrocatalyst for the oxygen evolution reaction (OER), a key anodic reaction in water …
In-situ construction of ternary metal oxide heterostructures Mn@ LaZrO: A novel multi-functional nanocatalyst for detecting environmental hazardous 4-nitroaniline
The level of environmental pollutants is kept increasing as the continued sources of waste
discharges into the ecosystem. The improper discharge of industrial waste products, widely …
discharges into the ecosystem. The improper discharge of industrial waste products, widely …
Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric
J Su, G Chen, W Wang, H Shi, S He, X Lv… - Applied Physics …, 2022 - pubs.aip.org
A normally off hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field
effect transistor (MOSFET) is realized by using lanthanum oxide (La 2 O 3) gate dielectric …
effect transistor (MOSFET) is realized by using lanthanum oxide (La 2 O 3) gate dielectric …
Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition
J Jeong, Y Han, H Sohn - Journal of Alloys and Compounds, 2022 - Elsevier
The electrical properties of La-doped ZrO 2 thin films were studied for an application to cell
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Molecular beam epitaxy (MBE) invented for the growth of compound semiconductors in the
70's has been successfully extended to the advanced growth of metals, oxides …
70's has been successfully extended to the advanced growth of metals, oxides …
Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures
We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers
comprising bilayer (Nb 2 O 5/Al 2 O 3) insulator configurations with similar (Nb/Nb) and …
comprising bilayer (Nb 2 O 5/Al 2 O 3) insulator configurations with similar (Nb/Nb) and …
Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment
DB Ruan, KS Chang-Liao, SH Yi… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of~ 2×
10-5 A/cm 2 at VG= V FB-1 V in p-substrate Ge (pGe) MOS device can be simultaneously …
10-5 A/cm 2 at VG= V FB-1 V in p-substrate Ge (pGe) MOS device can be simultaneously …
Remarkably enhanced plasma resistance of Y2O3-and Y-rich thin films through controllable reactive sputtering
HS Jang, KB Bae, SR Min, YS Oh, IH Lee… - Applied Surface Science, 2025 - Elsevier
Reactive sputtering was employed to fabricate yttrium-based oxide and metal-rich thin films
by reacting oxygen with sputtered yttrium atoms, utilizing a metal target. The discharge …
by reacting oxygen with sputtered yttrium atoms, utilizing a metal target. The discharge …