Dimensional scaling of ferroelectric properties of hafnia-zirconia thin films: Electrode interface effects
Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor
memories. However, a fundamental challenge that persists is the lack of understanding …
memories. However, a fundamental challenge that persists is the lack of understanding …
Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent
compatibility with silicon CMOS process flows; however, the reliability of polarization …
compatibility with silicon CMOS process flows; however, the reliability of polarization …
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
Ferroelectric materials have been widely researched for applications in memory and energy
storage. Among these materials and benefiting from their excellent chemical compatibility …
storage. Among these materials and benefiting from their excellent chemical compatibility …
Wake up and retention in zinc magnesium oxide ferroelectric films
Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure.
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
In this work, the impact of a tungsten oxide (WO3) seed and capping layer for ferroelectric La-
doped (Hf, Zr) O2 (La: HZO) based capacitors, designed with back-end-of-line (BEOL) …
doped (Hf, Zr) O2 (La: HZO) based capacitors, designed with back-end-of-line (BEOL) …
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films
As an emerging non-volatile memory technology, HfO 2-based ferroelectrics exhibit
excellent compatibility with silicon CMOS process flows; however, during repeated …
excellent compatibility with silicon CMOS process flows; however, during repeated …
Strain fluctuations unlock ferroelectricity in wurtzites
Ferroelectrics are of practical interest for non‐volatile data storage due to their reorientable,
crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics …
crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics …
Antiferroelectric HfZrO With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition
KT Lin, C Lo, SC Chang, HT Tsai… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
A novel method had been demonstrated to induce antiferroelectric (AFE) HZO with 75% Zr
concentrations to become ferroelectric (FE) properties by using low-temperature (150° C) …
concentrations to become ferroelectric (FE) properties by using low-temperature (150° C) …