Recent advances in ultraviolet photodetectors

Z Alaie, SM Nejad, MH Yousefi - Materials Science in Semiconductor …, 2015 - Elsevier
In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

Wide-bandgap semiconductor ultraviolet photodetectors

E Monroy, F Omnès, F Calle - Semiconductor science and …, 2003 - iopscience.iop.org
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

A Singh Pratiyush, S Krishnamoorthy… - Applied Physics …, 2017 - pubs.aip.org
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial b-
Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The …

Highly wavelength-selective enhancement of responsivity in Ag nanoparticle-modified ZnO UV photodetector

X Wang, K Liu, X Chen, B Li, M Jiang… - … applied materials & …, 2017 - ACS Publications
We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for
UV light sensing. After decoration of their surface with random Ag NPs, the dark current …

Gallium nitride–based photodiode: a review

HD Jabbar, MA Fakhri, MJ AbdulRazzaq - Materials Today: Proceedings, 2021 - Elsevier
Abstract This paper shows Gallium Nitride material based photodiode as an overview to use
it with different layer thickness in order to detect multi-spectral ranges and to obtain high …

TiO2 based metal-semiconductor-metal ultraviolet photodetectors

H Xue, X Kong, Z Liu, C Liu, J Zhou, W Chen… - Applied physics …, 2007 - pubs.aip.org
Nanocrystalline Ti O 2 thin films were prepared by sol-gel method and were then used to
fabricate metal-semiconductor-metal ultraviolet photodetectors with Au Schottky contact. It …

Preparation and characterization of UV-enhanced GaN/porous Si photodetector using PLA in liquid

MA Fakhri, AA Alwahib, ET Salim, RA Ismail… - Silicon, 2023 - Springer
The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …

[图书][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices

H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

Q Li, G Liu, J Yu, G Wang, S Wang, T Cheng… - Journal of Materials …, 2022 - pubs.rsc.org
Integration of a perovskite with third-generation semiconductors has attracted extensive
attention in numerous fields, such as wireless communication systems and spatial optical …

[PDF][PDF] Полупроводниковые фотоэлектропреобразователи для ультрафиолетовой области спектра

ТВ Бланк, ЮА Гольдберг - Физика и техника полупроводников, 2003 - journals.ioffe.ru
В настоящее время в мире интенсивно развиваются полупроводниковые
фотоэлектропреобразователи для ультрафиолетовой (УФ) области спектра в связи с …