Over the past several decades, atomic force microscopy (AFM) has advanced from a
technique used primarily for surface topography imaging to one capable of characterizing a …

This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

Reducing the delay of backend interconnects is critical in delivering improved performance
in next generation computer chips. One option is to implement interlayer dielectric (ILD) …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Etching of oxygen-based plasmas with sulfur dioxide (SO 2) or carbonyl sulfide (OCS) can
form high-aspect-ratio (HAR) features of amorphous carbon films as carbon hard masks …

In this study, we investigate buckling and postbuckling of etching-induced wiggling in a
bilayer structure consisting of mask and masked layers. To show effects of explicit modeling …

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-
width roughness (LWR) and resolution due in part to polymer swelling and favorable …

For the next technological generations of integrated circuits, the traditional challenges faced
by etch plasmas (profile control, selectivity, critical dimensions, uniformity, defects,…) …