AlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing
attention due to their wide applications in water purification, air disinfection, and sensing as …

GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

Abstract Micro-light-emitting-diodes (μLEDs) with size-independent peak external quantum
efficiency behavior was demonstrated from 10× 10 μm 2 to 100× 100 μm 2 by employing a …

The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …

The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs)
using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the …

We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase
epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p …

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers
(VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic …

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and
distinctive advantages for display, visible-light communication (VLC), and other novel …

We investigated the electrical and optical performances of semipolar (11-22) InGaN green
µLEDs with a size ranging from 20× 20 µm^ 2 to 100× 100 µm^ 2, grown on a low defect …

We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel
junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the …