A review of the most recent progresses of state-of-art gallium oxide power devices
H Zhou, J Zhang, C Zhang, Q Feng… - Journal of …, 2019 - iopscience.iop.org
Until very recently, gallium oxide (Ga 2 O 3) has aroused more and more interests in the
area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field …
area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field …
Steep-slope hysteresis-free negative capacitance MoS2 transistors
The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
A review on efficient self-heating in nanowire sensors: Prospects for very-low power devices
Self-heating operation, or the use of the resistance-probing signal to warm up and control
the temperature of nanowire devices, has been the subject of research for more than a …
the temperature of nanowire devices, has been the subject of research for more than a …
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
We have demonstrated that depletion/enhancement-mode β-Ga 2 O 3 on insulator field-
effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing …
effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing …
Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga2O3 thin films
Beta-phase gallium oxide (β-Ga 2 O 3), the most thermally stable phase of Ga 2 O 3, has
stimulated great interest in power electronics due to its ultra-wide bandgap (∼ 4.9 eV) and …
stimulated great interest in power electronics due to its ultra-wide bandgap (∼ 4.9 eV) and …
Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
The self-heating effect is a severe issue for high-power semiconductor devices, which
degrades the electron mobility and saturation velocity, and also affects the device reliability …
degrades the electron mobility and saturation velocity, and also affects the device reliability …
Layout design correlated with self-heating effect in stacked nanosheet transistors
L Cai, W Chen, G Du, X Zhang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
With technology node scaling down to 5 nm, the narrow device geometry confines the
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …
concern for device performance, output power density, run-time variability, and reliability of …
Impact of self-heating effect on transistor characterization and reliability issues in sub-10 nm technology nodes
FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve
transistor's performance and, however, also introduce some new problems, especially the …
transistor's performance and, however, also introduce some new problems, especially the …