To enhance the interface bonding and optoelectronic properties of ZnO/Si, we employed
graphene (Gra) as a buffer layer to mitigate lattice mismatch. Density functional theory (DFT) …

The undoped, Al-doped and In-doped ZnO thin films were deposited by ultrasonic spray
pyrolysis technique, onto glass and p-Si substrates and the physical properties of the films …

Indium doped zinc oxide thin films were deposited on p-type Si (100) substrates using
ultrasonic spray pyrolysis technique (ZnO: In/p-Si heterojunction). The structural …

Electrical characteristics and transport properties of n-ZnO/p-Si heterojunction diodes were
investigated by current–voltage (I–V) measurements between 260 and 340 K. The ZnO layer …

Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to
the transparent conductive oxides family (TCO). Strongly present as optical window in the …

Sn doped ZnO nanostructures deposited on Si substrate with (100) orientation by spray
pyrolysis method at temperature 450 C. Sn/Zn atomic ratio varies from 0% to 5%. The …

The study of the physical and physicochemical properties of the surface of a solid body is an
important area of science and technology. This is connected with the most important …

The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and
corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The …

This paper studies the sol–gel synthesis of ZnO: Co thin films as function of Co doping
concentration. The derived films were evaluated by using scanning electron microscopy …

The position of the absorption edge (the energy where the absorption values begin to differ
from zero) is one of the often used characteristics of the material. For thin films, it is usually …