Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

Y Zhang, Z Wang, J Zhu, Y Yang, M Rao… - Applied Physics …, 2020 - pubs.aip.org
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

Stimuli‐responsive memristive materials for artificial synapses and neuromorphic computing

H Bian, YY Goh, Y Liu, H Ling, L Xie… - Advanced Materials, 2021 - Wiley Online Library
Neuromorphic computing holds promise for building next‐generation intelligent systems in a
more energy‐efficient way than the conventional von Neumann computing architecture …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Memristors for energy‐efficient new computing paradigms

DS Jeong, KM Kim, S Kim, BJ Choi… - Advanced Electronic …, 2016 - Wiley Online Library
In this Review, memristors are examined from the frameworks of both von Neumann and
neuromorphic computing architectures. For the former, a new logic computational process …

Multibit memory operation of metal-oxide bi-layer memristors

S Stathopoulos, A Khiat, M Trapatseli, S Cortese… - Scientific reports, 2017 - nature.com
Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …

Emerging memories: resistive switching mechanisms and current status

DS Jeong, R Thomas, RS Katiyar… - Reports on progress …, 2012 - iopscience.iop.org
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …