Terahertz band communication systems: Challenges, novelties and standardization efforts
Wireless data rates are expected to be around 10Gbps or even more within the upcoming
decade. The realization of such high data rates is unlikely with the currently licensed bands …
decade. The realization of such high data rates is unlikely with the currently licensed bands …
Analytical performance assessment of THz wireless systems
AAA Boulogeorgos, EN Papasotiriou, A Alexiou - IEEE Access, 2019 - ieeexplore.ieee.org
This paper is focused on providing the analytical framework for the quantification and
evaluation of the joint effect of misalignment fading and hardware imperfections in the …
evaluation of the joint effect of misalignment fading and hardware imperfections in the …
A 240 GHz fully integrated wideband QPSK receiver in 65 nm CMOS
SV Thyagarajan, S Kang… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Operation at millimeter-wave/sub-terahertz frequencies allows one to realize very high data-
rate transceivers for wireless chip-to-chip communication. In this paper, a 240 GHz 16 Gbps …
rate transceivers for wireless chip-to-chip communication. In this paper, a 240 GHz 16 Gbps …
A 340-GHz heterodyne receiver front end in 40-nm CMOS for THz biomedical imaging applications
A low-power and high-performance 340-GHz heterodyne receiver front end (RFE) optimized
for terahertz (THz) biomedical imaging applications is proposed in this paper. The THz RFE …
for terahertz (THz) biomedical imaging applications is proposed in this paper. The THz RFE …
A 300-ghz 52-mw cmos receiver with on-chip lo generation
O Memioglu, Y Zhao, B Razavi - IEEE Journal of Solid-State …, 2023 - ieeexplore.ieee.org
A fully integrated receiver employs a heterodyne architecture with 270-and 27-GHz local
oscillators to alleviate phase mismatch issues. The system incorporates three on-chip phase …
oscillators to alleviate phase mismatch issues. The system incorporates three on-chip phase …
A 260–300-GHz mixer-first IQ receiver with fundamental LO driver in 130-nm SiGe process
We report a 280-GHz mixer-first quadrature receiver in 130-nm SiGe that achieves a peak
gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise …
gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise …
A 220–275 GHz direct-conversion receiver in 130-nm SiGe: C BiCMOS technology
This letter presents a wideband 240-GHz direct-conversion receiver manufactured in a 130-
nm SiGe: C BiCMOS technology with f T/f max= 300/500 GHz. A mixer-first receiver is …
nm SiGe: C BiCMOS technology with f T/f max= 300/500 GHz. A mixer-first receiver is …
Integrated 240-GHz dielectric sensor with DC readout circuit in a 130-nm SiGe BiCMOS technology
This paper presents a high-integration miniaturized dielectric spectroscopy system for
sensing the change of permittivity at 240 GHz in the SiGe BiCMOS technology. The sensor …
sensing the change of permittivity at 240 GHz in the SiGe BiCMOS technology. The sensor …
A 210–284-GHz I–Q receiver with on-chip VCO and divider chain
A 240-GHz direct conversion IQ receiver with 74-GHz RF bandwidth is reported. It features a
mixer-first architecture with fundamental local oscillator (LO)-frequency Gilbert-cell …
mixer-first architecture with fundamental local oscillator (LO)-frequency Gilbert-cell …
A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology
This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first
quadrature receiver chip working at 240 GHz. It has been implemented in a 0.13-μm SiGe …
quadrature receiver chip working at 240 GHz. It has been implemented in a 0.13-μm SiGe …