[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response
RB Laghumavarapu, A Moscho… - Applied Physics …, 2007 - pubs.aip.org
The authors report an enhanced infrared spectral response of GaAs-based solar cells that
incorporate type II GaSb quantum dots (QDs) formed using interfacial misfit array growth …
incorporate type II GaSb quantum dots (QDs) formed using interfacial misfit array growth …
Review of experimental results related to the operation of intermediate band solar cells
The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
Optical investigation of type II GaSb∕ GaAs self-assembled quantum dots
We have studied the emission and absorption properties of type II Ga Sb∕ Ga As quantum
dots embedded in a pin photodiode. The excitation power evolution provides clear …
dots embedded in a pin photodiode. The excitation power evolution provides clear …
Origin of the blueshift of photoluminescence in a type-II heterostructure
M Jo, M Sato, S Miyamura, H Sasakura… - Nanoscale Research …, 2012 - Springer
Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined
in terms of a self-consistent approach including excitonic effects. This analysis shows that …
in terms of a self-consistent approach including excitonic effects. This analysis shows that …
Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well
J Tatebayashi, A Khoshakhlagh, SH Huang… - Applied Physics …, 2007 - pubs.aip.org
The authors report the optical characteristics of Ga Sb∕ Ga As self-assembled quantum
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of …
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of …
Some advantages of intermediate band solar cells based on type II quantum dots
A Luque, PG Linares, A Mellor, V Andreev… - Applied Physics …, 2013 - pubs.aip.org
Unlike Type I, Type II quantum dots do not have hole bound states. This precludes that they
invade the host semiconductor bandgap and prevents the reduction of voltage in …
invade the host semiconductor bandgap and prevents the reduction of voltage in …
Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb
SH Huang, G Balakrishnan, M Mehta… - Applied physics …, 2007 - pubs.aip.org
The authors report the formation of an interfacial misfit (IMF) array in the growth of relaxed
GaAs bulk layers on a (001) GaSb surface. Under specific conditions, the high quality IMF …
GaAs bulk layers on a (001) GaSb surface. Under specific conditions, the high quality IMF …
Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
A Khoshakhlagh, F Jaeckel, C Hains… - Applied Physics …, 2010 - pubs.aip.org
We report on the measurement of the background carrier concentration of midwave and long-
wave infrared (MWIR and LWIR) type-II InAs/GaSb superlattices (SLs) on GaAs substrates …
wave infrared (MWIR and LWIR) type-II InAs/GaSb superlattices (SLs) on GaAs substrates …
Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs
Z Mi, C Wu, J Yang, P Bhattacharya - Journal of Vacuum Science & …, 2008 - pubs.aip.org
The authors report the molecular beam epitaxial growth and characteristics of 1.5 μ m InAs
quantum dot lasers grown on GaAs utilizing both single-and multiple-step-graded InGaAs …
quantum dot lasers grown on GaAs utilizing both single-and multiple-step-graded InGaAs …