6,649,492 B1* 1 1/2003 Chu et al....... 438,478 WO O2, 33746 4, 2002 6,703,144 B1* 3/2004
Fitzgerald...... 428,641 OTHER PUBLICATIONS 6,713,326 B1* 3/2004 Cheng et al …

A method for forming a field effect transistor device includes forming a gate stack portion on
a substrate, forming a spacer portion on the gates stack portion and a portion of the …

(57) ABSTRACT A method for self-supported transfer of a finelayer, in which at least one
species of ions is implanted in a source-substrate at a specified depth in relation to the …

A method for preparing a thin layer of GaN from a starting substrate in which at least one
thick surface area extending along a free face of the starting substrate includes GaN, where …

Method of fabricating a microelectronic structure includes preparing a first structure having a
first material different from silicon on a surface thereof and forming at least one covering …

A method of fabricating a low defect germanium thin film includes preparing a silicon wafer
for germanium deposition; forming a germanium film using a two-step CVD process …

A method of forming a structure that includes a removed layer taken from a donor wafer
donor wafer that includes a first layer of Si 1-x Ge x and a second layer of Si 1-y Ge y. The …

A method of transferring a thin layer from a source substrate having a surface layer of a first
material along a free surface thereof to a target substrate having at least one surface layer of …

(57) ABSTRACT A method for making a thin-film element includes epitaxially growing a first
crystalline layer on a second crystalline layer of a Support where the second crystalline layer …

The present invention is a method for producing a semicon ductor wafer, comprising at least
steps of epitaxially growing a SiGe layer (0< X-1) on an SOI wafer, forming a Si Gelayer (0sY …