Low-temperature plasmas in carbon nanostructure synthesis
I Levchenko, M Keidar, S Xu, H Kersten… - Journal of Vacuum …, 2013 - pubs.aip.org
Plasma-based techniques offer many unique possibilities for the synthesis of various
nanostructures both on the surface and in the plasma bulk. In contrast to the conventional …
nanostructures both on the surface and in the plasma bulk. In contrast to the conventional …
Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method
A Galashev, K Abramova - Materials, 2023 - mdpi.com
Silicon carbide is successfully implemented in semiconductor technology; it is also used in
systems operating under aggressive environmental conditions, including high temperatures …
systems operating under aggressive environmental conditions, including high temperatures …
Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal
Q Xia, X Chen, W Ai - Journal of Crystal Growth, 2023 - Elsevier
The growth quality of 3C-SiC crystal is affected by the three-dimensional critical nucleation.
A three-dimensional kinetic Monte Carlo model for 3C-SiC crystal growth on a planar …
A three-dimensional kinetic Monte Carlo model for 3C-SiC crystal growth on a planar …
Тонкопленочные гетерокомпозиции на основе карбида кремния. Раздел: Физико-технологические основы получения гетероструктур
ГД Кузнецов, ГК Сафаралиев, МН Стриханов… - 2018 - elibrary.ru
Рассматриваются основные возможности различных методов и способов для
получения тонких слоев карбида кремния на различных подложках для создания …
получения тонких слоев карбида кремния на различных подложках для создания …