Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …

Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Abstract Gallium oxide (Ga $ _ {2} $ O $ _ {3} $) has gained increased attention for power
devices due to its superior material properties and the availability of economical device …

Abstract almaBTE is a software package that solves the space-and time-dependent
Boltzmann transport equation for phonons, using only ab-initio calculated quantities as …

Abstract Gallium oxide (Ga 2 O 3) is an emerging wide-bandgap semiconductor for high-
power, low-loss transistors and diodes by virtue of its excellent material properties and …

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …