As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

In this study, we investigate the coexistence of short-and long-term memory effects owing to
the programmable retention characteristics of a two-dimensional Au/MoS2/Au atomristor …

A hard breakdown phenomenon occurs in the TiN/WOX/Pt device owing to the metallic
nature of the WOX layer deposited by pulsed direct current (DC) sputtering. In particular …

The continuous advancement of computing technologies such as the Internet of Things and
artificial intelligence emphasizes the need for innovative approaches to data processing …

Resistive random access memory (RRAM) has emerged as a competitive candidate for
nonvolatile memory due to its high speed, low power consumption, simple structure, strong …

A breakthrough in this field is the introduction of vertical resistive random-access memory
(VRRAM), which features stacked electrodes capable of incorporating multiple devices in …

In this study, we examine an ITO/NiO X/WO X/Pt pn heterojunction memristor for
neuromorphic applications as a synaptic crossbar array. The transition in the depletion …

In this study, we evaluated the performance of a Pt/Al/TiOy/TiOx/Al2O3/Pt RRAM array
device in synaptic and reservoir computing applications. The device exhibited excellent …

This study systematically investigates analog switching and neuromorphic characteristics in
a ZnO-based memristor by varying the anodic top electrode (TE) materials [indium tin oxide …

A fully depleted silicon‐on‐insulator (FDSOI) metal‐oxide‐semiconductor field‐effect
transistors (MOSFETs) device is investigated as for an electronic synapse emulating the …