AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit
This contribution presents the AM/AM and AM/PM characteristics of a 6-bit Phase and
Amplitude Setting Circuit realized in Gallium Nitride technology and operating at the Ku …
Amplitude Setting Circuit realized in Gallium Nitride technology and operating at the Ku …
A C-Band MMIC Multi-Functional Core Chip with 7 Bits Phase Shifter and Attenuator Using GaAs pHEMT
This paper demonstrates about MMIC multi-function core chip with the operating frequency
range from 5GHz to 6G Hz for space payload earth observation applications. The core chip …
range from 5GHz to 6G Hz for space payload earth observation applications. The core chip …
32 dBm IP1dB/46 dBm IIP3 GaN Phase-Amplitude Setting Circuit at Ku-Band
Design and characterization of a 6-bit Phase and Amplitude Setting circuit realized in
Gallium Nitride MMIC technology operating in Ku-band are reported in this brief. An analysis …
Gallium Nitride MMIC technology operating in Ku-band are reported in this brief. An analysis …
A Ka-Band 3-Bit GaN Digital Step Attenuator Using Phase Compensation Method
S Jang, J Yang, J Lee, C Park - IEEE Access, 2023 - ieeexplore.ieee.org
In this study, a 3-bit digital step attenuator (DSA) based on the GaN HEMT process was
designed. A distributed structure was adopted to secure stable RF characteristics within a …
designed. A distributed structure was adopted to secure stable RF characteristics within a …
A Highly-Integrated Reconfigurable Ka-Band Receiver Supporting Active and Passive Detections in a 90-nm CMOS Technology
CH Li, KD Huang, TY Chiu - IEEE Access, 2021 - ieeexplore.ieee.org
A highly-integrated reconfigurable Ka-band receiver in a 90-nm CMOS technology is
proposed for the applications of satellite wireless communications, remote sensing of …
proposed for the applications of satellite wireless communications, remote sensing of …
Multifunction GaN Power Amplifier Single Chip
SK Pandey, P Verma, P Srivastava… - 2022 IEEE Microwaves …, 2022 - ieeexplore.ieee.org
A multifunction Ku-band power amplifier chipset is designed using 250nm GaN/SiC HEMT
process. This single chip provides more than 2W saturated output power with large signal …
process. This single chip provides more than 2W saturated output power with large signal …