This book summarizes the research of more than a decade. Its early motivation dates back to
the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte …

In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of
static characteristics, high-frequency response and noise behaviour in a 0.3 µm gate-length …

For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with
Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one …

In this paper, a detailed research of the high-frequency noise sources and figures of merit
(FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator …

Room temperature electron mobility (μ) in nanometer Si metal-oxide-semiconductor field-
effect transistors (MOSFETs) with gate length (LG) down to 30 nm was determined by the …

We review the main problems met by the Monte Carlo technique when dealing with the
study of noise in electronic devices. We also summarize the major challenges in the noise …

A Monte Carlo investigation of charge transport—including quantum tunnelling effects—
across Schottky barriers (both n-type and p-type) in the reverse bias regime is presented …

We investigate the static and dynamic characteristics of a 0.25 µm gate-length fully-depleted
silicon-on-insulator metal–oxide–semiconductor field effect transistor. Considering properly …

Due to the enormous industrial interest of the SOI MOSFET technology, a proper
understanding of the physics underlying the behavior of these devices is necessary in order …

In this paper we present a Monte Carlo study of the static performance of Schottky barrier
(SB) SOI MOSFETs. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling …