Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

Integrated photonics will play a key role in quantum systems as they grow from few-qubit
prototypes to tens of thousands of qubits. The underlying optical quantum technologies can …

In this paper, we present a brief history of silicon photonics from the early research papers in
the late 1980s and early 1990s, to the potentially revolutionary technology that exists today …

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for
high-speed, low-power-consumption silicon photonics and low-cost, light-weight …

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser
epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si …

Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile
material system with unique physical properties for a wide range of device applications. With …

Silicon photonics is becoming the leading technology for photonic integrated circuits (PICs)
due to large-scale integration, low cost, and high-volume productions enabled by …

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as
dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on …

This paper reports a hybrid integrated light source fabricated on a Si platform using a spot-
size converter (SSC) with a trident Si waveguide. Low-loss coupling for 1.55 μm and 1.3 μm …