The machined surface-layer quality of sapphire is influenced by its anisotropic properties.
This work investigates the anisotropic cutting mechanisms on the surface quality of R-plane …

The influence of the thickness of aluminum nitride (AlN) on the surface morphology,
crystalline quality, and polarity of N-polar gallium nitride (GaN) grown by metal organic …

In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors
(HEMTs) on vicinal c-plane sapphire substrates with different misoriented angles are …

We show that N-polar Ga N/(Al, Ga) N/Ga N heterostructures exhibit significant N deficiency
at the bottom (Al, Ga) N/Ga N interface, and that these N vacancies are responsible for the …

We performed metalorganic vapor phase epitaxy (MOVPE) growth of AlN (MOVPE-AlN) and
AlGaN films on N-polar face-to-face annealed and sputtered AlN templates (N-polar FFA Sp …

Herein, nitrogen‐polar (N‐polar,(000‐1)) aluminum nitride (AlN) is grown on sapphire
substrates with various misorientation angles through metal‐organic vapor phase epitaxy …

The nitrogen‐polar GaN material system is a promising candidate for high‐frequency
applications, such as those in the millimeter‐wave range. Schottky barrier height is one of …

We report thin, high quality n+ type doped N-polar GaN contact layers grown using metal-
organic chemical vapor deposition with carrier concentration as high as 3.5× 10 20 cm− 3 …

Single-crystal sapphire specimen (α-Al2O3) have been widely applied in the semiconductor
industry, microelectronics, and so on. In order to shorten the production time and improve …

We have successfully prepared GaN based high electron mobility transistors (HEMTs) on
metallic substrates transferred from silicon substrates by electroplating technique. GaN …