Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

For the limitation of experimental methods in crystal characterization, in this study, the
mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN …

Here, we propose, fabricate and characterize suspended photonic integration of InGaN
multiple-quantum-well light-emitting diode (MQW-LED), waveguide and InGaN MQW …

In this paper, a review of the different buffer layers and heterostructures developed for Al
(Ga) N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The …

Gallium nitride (GaN) films with excellent structural, electrical and optical properties have
been epitaxially grown on La 0.3 Sr 1.7 AlTaO 6 (LSAT)(111) substrates by radio-frequency …

We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit
strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to …

This paper reports on the development of a thermo-electrical non-linear model for sub-100
nm gate length AlGaN/GaN High-Electron-Mobility Transistors (HEMT) grown on silicon …

Allelopathic compounds are secreted into the environment by living plants or released from
dead plant tissues. The basic release routes of allelopathic substances by donor plants are …

In this chapter, the advantages of using ammonia as the nitrogen source for molecular beam
epitaxy (MBE) growth are discussed. Then, a description of the growth of AlGaN/GaN HEMT …