Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …

This review addresses the recent development and future prospects for Sc-based III-nitride
alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are …

The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-
GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier …

The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary
InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing …

The gain characteristics of high Al-content AlGaN-delta-GaN quantum wells (QWs) are
investigated for mid-and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer …