Linearity assessment of GaN HEMTs on Si using nonlinear characterisation

Linearity performance and distortion characteristics of T and π–Gate AlGaN/GaN HEMT

P Pal, S Kabra - … on Inventive Computing and Informatics (ICICI …, 2024 - ieeexplore.ieee.org
This study examines the distortion and linearity characteristics of T and π-gated GaN-
HEMTs. The investigation entails a comparative analysis of several figure-of-merits (FOM) …
被引用次数：1 相关文章 所有 2 个版本
[PDF] ieee.org

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity

T Hossain, T Hossain, AKMA Alam… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal
gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and …
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Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages

P Wang, M Mi, S An, X Du, Y Zhou… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, using the multiple threshold voltages (multi-coupling technology introduces an
innovative approach to leverage AlGaN/GaN-based high-electron-mobility transistor …
被引用次数：3 相关文章 所有 2 个版本
[PDF] cambridge.org

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

R ElKashlan, A Khaled, R Rodriguez… - International Journal of …, 2023 - cambridge.org
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize
T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX …
被引用次数：1 相关文章 所有 6 个版本
[PDF] vub.be

[PDF][PDF] GaN-on-Si Technology for Modern Wireless Communication Systems: Optimisation Insight Using RF Characterisation

SPDIP Wambacq, IB Parvais, IW Meulebroeck… - researchportal.vub.be
De stijgende complexiteit van onze moderne communicatiesystemen heeft een optimalisatie
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …
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