A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
[HTML][HTML] Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at
the β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 interface through modulation doping. Shubnikov-de Haas …
the β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 interface through modulation doping. Shubnikov-de Haas …
[HTML][HTML] Structural and electronic properties of Ga2O3-Al2O3 alloys
Ga 2 O 3 is emerging as an important electronic material. Alloying with Al 2 O 3 is a viable
method to achieve carrier confinement, to increase the bandgap, or to modify the lattice …
method to achieve carrier confinement, to increase the bandgap, or to modify the lattice …
[HTML][HTML] Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
Modulation-doped heterostructures are a key enabler for realizing high mobility and better
scaling properties for high performance transistors. We report the realization of a modulation …
scaling properties for high performance transistors. We report the realization of a modulation …
Band Gap and Band Offset of and Alloys
Ga 2 O 3 and (Al x Ga 1− x) 2 O 3 alloys are promising materials for solar-blind UV
photodetectors and high-power transistors. Basic key parameters in the device design, such …
photodetectors and high-power transistors. Basic key parameters in the device design, such …
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
Carrier confinement observed at modulation-doped β-(AlxGa1− x) 2O3/Ga2O3 heterojunction interface
T Oshima, Y Kato, N Kawano, A Kuramata… - Applied Physics …, 2017 - iopscience.iop.org
A β-(Al x Ga 1− x) 2 O 3: Si/Ga 2 O 3 modulation-doped structure was fabricated by direct β-
(Al x Ga 1− x) 2 O 3 epitaxial growth on a (010) β-Ga 2 O 3 substrate. Si on the order of 10 …
(Al x Ga 1− x) 2 O 3 epitaxial growth on a (010) β-Ga 2 O 3 substrate. Si on the order of 10 …
[HTML][HTML] Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …
Prospects for n-type doping of (AlxGa1− x) 2O3 alloys
We systematically explore the properties of group-IV (C, Si, Ge, and Sn) and transition metal
(Hf, Zr, and Ta) dopants substituting on the cation site in (AlxGa1Āx) 2O3 (AlGO) alloys using …
(Hf, Zr, and Ta) dopants substituting on the cation site in (AlxGa1Āx) 2O3 (AlGO) alloys using …