With an extensive range of distinctive features at nano meter-scale thicknesses, two-
dimensional (2D) materials drawn the attention of the scientific community. Despite …

Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

Kelvin probe force microscopy measures surface potential and delivers insights into
nanoscale electronic properties, including work function, doping levels, and localized …

Herein, n–n type one dimensional ZnO@ In2O3 heterojunction nanowires have been
developed and their local electron transport properties during trace-level NO2 gas sensing …

We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …

Metal-halide perovskites (MHPs) have gained substantial interest in the energy and
optoelectronics field. MHPs in nanostructure forms, such as nanocrystals and nanowires …

In this work we investigate effects of the crystal phase, twinning defects and shell formation
on the work function distribution over the surface of axially heterostructured GaP/GaPAs/GaP …

Abstract Properties of oxidized InP surfaces, which are known to cause less electrical and
optical losses than other III–V oxides, are relevant to develop the passivation of current and …

With size reduction of active elements in microelectronics to tens of nanometers and below,
the effect of surface and interface properties on overall device performance becomes crucial …

Hydrogen exposure and annealing at 400 C leads to a layer-by-layer etching of the n-doped
GaAs (110) cleavage surface removing islands and forming preferentially step edge …