Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin …
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2020 - Springer
Abstract Effects of frequency and temperature variations on the electrical properties of Au/Si
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …
Performance analysis of a 4H-SiC npn phototransistor with floating base for ultraviolet light detection
Y Wang, W Li, D Zhou, W Xu, F Ren… - … on Electron Devices, 2022 - ieeexplore.ieee.org
A 4H-SiC npn bipolar phototransistor detector (PTD) with a floating-base configuration is
fabricated and studied in this work. The PTD exhibits low dark current and high responsivity …
fabricated and studied in this work. The PTD exhibits low dark current and high responsivity …
Zn–Al layered double hydroxide film functionalized by a luminescent octahedral molybdenum cluster: Ultraviolet–visible photoconductivity response
TKN Nguyen, N Dumait, F Grasset… - … Applied Materials & …, 2020 - ACS Publications
A novel UV–Vis photodetector consisting of an octahedral molybdenum cluster-
functionalized Zn2Al layered double hydroxide (LDH) has been successfully synthesized by …
functionalized Zn2Al layered double hydroxide (LDH) has been successfully synthesized by …
Study on damage of 4H-SiC single crystal through indentation and scratch testing in micro–nano scales
P Chai, S Li, Y Li, X Yin - Applied Sciences, 2020 - mdpi.com
In this paper, a series of indentation tests in which the maximum normal force ranged from
0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals …
0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals …
Analysis of double Gaussian distribution on barrier inhomogeneity in a Au/n-4H SiC Schottky diode
HH Gullu, D Seme Sirin, DE Yıldız - Journal of Electronic Materials, 2021 - Springer
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at
the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au …
the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au …
Hybrid Organic Carbazole and 4H Silicon Carbide Photodetectors
Organic carbazoles are low-cost materials that can work as hole transport (p-type) layers.
They have found a wide range of applications in chemistry, medicine, organic …
They have found a wide range of applications in chemistry, medicine, organic …
A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A
R Zhang, J Liu, G Liu, L Yao, Y Liu, R Hong… - Electronics …, 2023 - Wiley Online Library
Abstract A dual P‐layer 4H‐SiC p‐i‐n ultraviolet photodetector is proposed and studied. The
modeling results of the photoelectric characteristics demonstrate the dual P‐layer structure …
modeling results of the photoelectric characteristics demonstrate the dual P‐layer structure …
Highly visible-blind ZnO photodetector by customizing nanostructures with controlled defects
In this work, a highly visible-blind UV photodetector with a large photo-responsivity using
ZnO nanostructures is demonstrated. A large photoconductive gain of 2050 and external …
ZnO nanostructures is demonstrated. A large photoconductive gain of 2050 and external …
Deep and Near UV Photodetector based upon Zirconium diboride and n-doped Silicon carbide
In this article, a deep and near-ultraviolet photodetector (PD), consisting of an alloy of
zirconium diboride (ZrB2) and Chromium (Cr) deposited on top of an n-doped silicon …
zirconium diboride (ZrB2) and Chromium (Cr) deposited on top of an n-doped silicon …
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness
In this work, a high-performance 4H-silicon carbide (SiC) photodiode with a tunable peak
response wavelength is demonstrated. Based on the epilayer structure design featuring a …
response wavelength is demonstrated. Based on the epilayer structure design featuring a …