Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Aluminum scandium nitride (Al1–x Sc x N), with its large remanent polarization, is an
attractive material for high-density ferroelectric random-access memories. However, the …

Non-volatile memory devices that can operate reliably at high temperature are required for
the development of extreme environment electronics. However, creating such devices …

Commercial production of integrated photonic devices is limited by scalability of desirable
material platforms. We explore a relatively new photonic material, AlScN, for its use in …

This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in
sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency …

Low-energy compute-in-memory architectures promise to reduce the energy demand for
computation and data storage. Wurtzite-type ferroelectrics are promising options for both …

Aluminum scandium nitride (AlScN) has emerged as a promising candidate for next‐
generation ferroelectric memories, offering a much higher remanent charge density than …

This Letter presents oriented growth and switching of thin (∼ 30 nm) co-sputtered
ferroelectric (FE) aluminum scandium nitride (AlScN) films directly on degenerately doped …

Despite the considerable potential and significant promise of aluminum scandium nitride
(AlScN) ferroelectric materials for neuromorphic computing applications, challenges related …