Since the early 2000s, the impending end of Moore's scaling, as the physical limits to
shrinking transistors have been approached, has fueled interest in improving the …

CMOS-RRAM integration holds great promise for low energy and high throughput
neuromorphic computing. However, most RRAM technologies relying on filamentary …

A crucial step in order to achieve fast and low-energy switching operations in resistive
random access memory (RRAM) memories is the reduction of the programming pulse width …

The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically
modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different …

Stateful logic through memristor is a promising technology to build Computing-in-Memory
(CIM) systems. However, aging-induced degradation of memristors' threshold voltage …

The two main features of the memristive devices which makes them the promising
candidates for neuromorphic applications are low power consumption and CMOS …

This paper explores the suitability of atomic layer deposited hafnium oxide (HfO 2) based
resistive oxide memories for their integration into advanced embedded non-volatile memory …

Memristors are promising candidates for new memory technologies and are capable to
mimic synapses in artificial neural networks. The switching in memristive devices occurs …

In a memristor or a so-called memristive device, the resistance state depends on the
previous charge flow through the device. The new resistance state is stored and classifies a …

The two main features of the memristive devices which makes them the promising
candidates for neuromorphic applications are low power consumption and CMOS …