By actively using not only charge transport of electrons and holes but also their spins, we
can create a variety of new phenomena and functional materials. It is highly expected that …

We investigate various ultrafast optical processes in ferromagnetic (III, Mn) V
semiconductors induced by femtosecond laser pulses. Two-colour time-resolved magneto …

We review recent progress made in the field of semiconductor spintronics, a branch of
semiconductor electronics where both charge and spin degrees of freedom play an …

Time-resolved magneto-optical Kerr spectroscopy of ferromagnetic InMnAs reveals two
distinct demagnetization processes—fast (<? format?><<? format?> 1 ps) and slow (< …

The authors found high Curie temperatures of up to 90 K in annealed (In, Mn) As epilayers
grown by molecular beam epitaxy using a relatively high V/III beam flux ratio. Magnetization …

This article reviews the recent advances of epitaxial ferromagnetic thin films and
heterostructures as well as devices towards semiconductor-based spin-electronics or often …

Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

The electronic structure of the new diluted magnetic semiconductor Ba 1− x K x (Zn 1− y Mn
y) 2 As 2 (x= 0.30, y= 0.15) in single crystal form has been investigated by angle-resolved …

Structural and magnetic properties of (In, Ga) As-(Ga, Mn) As core–shell nanowires grown
by molecular beam epitaxy on GaAs (111) B substrate with gold catalyst have been …

We have studied magnetic properties of heavily Mn-doped [(In 0.44 Ga 0.56) 0.79 Mn 0.21]
As thin films grown by low-temperature molecular-beam epitaxy on InP substrates.(InGaMn) …