Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN
nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift …

There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes
(LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal–organic …

White light emitting diodes (wLEDs) have become, in the last decade, the most efficient
device for most lighting applications. They are mainly composed of indium and gallium for …

In this paper, we review the optoelectronic properties and applications of graphene and
graphene heterostructures in recent years. Graphene is a 2D crystal with a single atomic …

We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …