A 108GS/s track and hold amplifier with MOS-HBT switch
K Vasilakopoulos, A Cathelin… - 2016 IEEE MTT-S …, 2016 - ieeexplore.ieee.org
A 108GS/s track-and-hold amplifier manufactured in a 55nm SiGe BiCMOS technology
achieves 40GHz bandwidth with THD and SFDR of-49 dB and 55 dB, respectively. This …
achieves 40GHz bandwidth with THD and SFDR of-49 dB and 55 dB, respectively. This …
Low distortion 50 GSamples/s track-hold and sample-hold amplifiers
S Daneshgar, Z Griffith, M Seo… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA)
designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) …
designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) …
Time-Interleaved Switched Emitter Followers to Extend Front-End Sampling Rates to up to 200 GS/s
Optical transceivers with more than 50 GBd are now being deployed, while the use of more
than 100 GBd is currently under investigation. CMOS components, such as the analog-to …
than 100 GBd is currently under investigation. CMOS components, such as the analog-to …
A 25.6-GS/s 40-GHz 1-dB BW current-mode track and hold circuit with more than 5-ENOB
A majority of HBT-based track and hold circuits (T/H) with more than 10 GS/s use switched
emitter followers (SEFs) as their primary sampling element. The SEFs enable high sampling …
emitter followers (SEFs) as their primary sampling element. The SEFs enable high sampling …
Design and analysis of CMOS high-speed high dynamic-range track-and-hold amplifiers
YC Liu, HY Chang, SY Huang… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Design and analysis of two high-speed high dynamic-range track-and-hold amplifiers are
presented in this paper using 65-and 90-nm CMOS processes. To achieve remarkable …
presented in this paper using 65-and 90-nm CMOS processes. To achieve remarkable …
32-GS/s SiGe Track-and-Hold Amplifier with 58-GHz Bandwidth and− 64-dBc to− 29-dBc HD3
We demonstrate an ultra-wideband 32-GS/s SiGe track-and-hold amplifier with 58-GHz
bandwidth and a compact footprint due to the inductorless design. The circuit achieves a …
bandwidth and a compact footprint due to the inductorless design. The circuit achieves a …
Above 60 GHz bandwidth 10 GS/s sampling rate track-and-hold amplifier in 130 nm SiGe BiCMOS technology
L Wu, M Weizel, JC Scheytt - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-
follower (SEF) topology. The THA exhibits both large-and small-signal bandwidth exeeding …
follower (SEF) topology. The THA exhibits both large-and small-signal bandwidth exeeding …
64-GS/s 6-Bit track-and-hold circuit with more than 61 GHz bandwidth at 1.0 Vpp input voltage swing in 90-nm SiGe BiCMOS technology
Time-interleaving of energy-efficient data converter cores enables record symbol rates in
electronic receivers. High-speed applications like optical data transmission or direct down …
electronic receivers. High-speed applications like optical data transmission or direct down …
A 70 GHz small-signal bandwidth 40 GS/s track-and-hold amplifier in 130 nm SiGe BiCMOS technology
L Wu, M Weizel, JC Scheytt - 2019 26th IEEE International …, 2019 - ieeexplore.ieee.org
This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-
follower (SEF) topology. The THA exhibits a record 3dB small-signal bandwidth of 70 GHz …
follower (SEF) topology. The THA exhibits a record 3dB small-signal bandwidth of 70 GHz …
Analysis and design of a charge sampler with 70-GHz 1-dB bandwidth in 130-nm SiGe BiCMOS
L Wu, JC Scheytt - IEEE Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
This paper investigates an ultra-broadband sampling technique based on charge sampling
using an Integrate-and-Hold Circuit (IHC) and ultra-short integration times. The charge …
using an Integrate-and-Hold Circuit (IHC) and ultra-short integration times. The charge …