Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
CD English, G Shine, VE Dorgan, KC Saraswat… - Nano …, 2016 - ACS Publications
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact
resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts …
resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts …
Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition
Two-dimensional molybdenum disulfide (MoS2) is a semiconductor that could be used to
build scaled transistors and other advanced electronic and optoelectronic devices. However …
build scaled transistors and other advanced electronic and optoelectronic devices. However …
[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs
HH Radamson, M Kolahdouz - Journal of Materials Science: Materials in …, 2015 - Springer
This article reviews the selective epitaxy growth of intrinsic, B-and C-doped SiGe layers on
recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A …
recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A …
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
T Chiarella, L Witters, A Mercha, C Kerner… - Solid-State …, 2010 - Elsevier
The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks
to its improved electrostatics and short-channel effect control. FinFETs represent one of the …
to its improved electrostatics and short-channel effect control. FinFETs represent one of the …
Effect of Mole fraction and Fin Material on Performance Parameter of 14 nm Heterojunction Si1-xGex FinFET and Application as an Inverter
S Verma, SL Tripathi - Silicon, 2022 - Springer
This work presents a new SOI 14 nm heterojunction FinFET with Si 1-x Ge x fin for low-
power digital logic circuits. The channel region of the proposed device consists of Si 1-x Ge …
power digital logic circuits. The channel region of the proposed device consists of Si 1-x Ge …
Multi-gate devices for the 32 nm technology node and beyond
Due to the limited control of the short channel effects, the high junction leakage caused by
band-to-band tunneling and the dramatically increased VT statistical fluctuations, the scaling …
band-to-band tunneling and the dramatically increased VT statistical fluctuations, the scaling …
Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width
In this paper, TriGate nanowire (TGNW) FETs with high-κ/metal gate are studied as an
alternative way to planar devices for the future CMOS technological nodes (14 nm and …
alternative way to planar devices for the future CMOS technological nodes (14 nm and …
Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?
AB Sachid, R Francis, MS Baghini… - 2008 IEEE …, 2008 - ieeexplore.ieee.org
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T FIN)
necessary to maintain acceptable short-channel performance. For the 45 nm technology …
necessary to maintain acceptable short-channel performance. For the 45 nm technology …
Impact & Analysis of Inverted-T shaped Fin on the Performance parameters of 14-nm heterojunction FinFET
S Verma, SL Tripathi - Silicon, 2022 - Springer
A new high-performance inverted-T shaped 14 nm heterojunction FinFETs has been
proposed that originate from the rectangular fin structures. The rationale for proposing this …
proposed that originate from the rectangular fin structures. The rationale for proposing this …