Terahertz communications: Challenges in the next decade
Thanks to the abrupt advances in semiconductor technologies, particularly in terms of the
operating frequency, the last decade has seen various efforts and trials in attempts to …
operating frequency, the last decade has seen various efforts and trials in attempts to …
Emerging terahertz integrated systems in silicon
Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the
past decade. The demonstrated basic component performance, as well as the maturity of …
past decade. The demonstrated basic component performance, as well as the maturity of …
Terahertz band: Next frontier for wireless communications
This paper provides an in-depth view of Terahertz Band (0.1–10 THz) communication, which
is envisioned as a key technology to satisfy the increasing demand for higher speed …
is envisioned as a key technology to satisfy the increasing demand for higher speed …
First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process
X Mei, W Yoshida, M Lange, J Lee… - IEEE Electron …, 2015 - ieeexplore.ieee.org
We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP
high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 …
high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 …
InP HBT technologies for THz integrated circuits
Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …
Terahertz band communication systems: Challenges, novelties and standardization efforts
Wireless data rates are expected to be around 10Gbps or even more within the upcoming
decade. The realization of such high data rates is unlikely with the currently licensed bands …
decade. The realization of such high data rates is unlikely with the currently licensed bands …
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
Towards MMIC-based 300GHz indoor wireless communication systems
I Kallfass, I Dan, S Rey, P Harati, J Antes… - IEICE transactions on …, 2015 - search.ieice.org
This contribution presents a full MMIC chip set, transmit and receive RF frontend and data
transmission experiments at a carrier frequency of 300GHz and with data rates of up to …
transmission experiments at a carrier frequency of 300GHz and with data rates of up to …
First demonstration of distributed amplifier MMICs with more than 300-GHz bandwidth
This article reports on the first demonstration of distributed amplifier monolithic microwave
integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three …
integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three …
Enhancement of to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs
T Takahashi, Y Kawano, K Makiyama… - … on Electron Devices, 2016 - ieeexplore.ieee.org
A high maximum frequency of oscillation (f max) of 910 GHz was achieved at InAlAs/InGaAs
highelectron mobility transistors (HEMTs) with a relatively long gate length (LG) of 75 nm by …
highelectron mobility transistors (HEMTs) with a relatively long gate length (LG) of 75 nm by …