Systematic changes in structural, optical and electrical properties of nanocrystalline silicon
(nc-Si: H) films prepared at 250° C in capacitively-coupled RF-PECVD operated at 200 W of …

This work reports an investigation of the Al‐doped ZnO (AZO) film deposition process using
ICP assisted DC magnetron plasmas, at different working pressures. The mechanism of …

To achieve rapid, uniform deposition of an amorphous hydrogenated silicon (a-Si: H) film, a
capacitively coupled plasma (CCP) is often used at an intermediate pressure (> 100 Pa) …

The advanced opto‐electronic properties of microcrystalline silicon oxide (µc‐SiOx: H) thin
film layers deposited by means of plasma enhanced chemical vapor deposition (PECVD) …

Hydrogenated nanocrystalline silicon (nc-Si: H) films intended for efficient nc-Si: H solar
cells are usually made at the transition to the nanocrystalline regime using the plasma …

The effect of neutral transport on the deposition rate profiles of thin films formed by plasma-
enhanced chemical vapor deposition (PECVD) is investigated to improve the uniformity of …

This work reports a detailed study on the low-temperature synthesis of highly conductive
transparent Al-doped ZnO films using magnetron sputtering with the support of an …

To increase the efficiency in p‐type wafer‐based silicon heterojunction (SHJ) technology,
one of the most crucial challenges is the achievement of excellent surface passivation …

Technical difficulties hinder the formation of uniform deposition profiles near the electrode
edge during a deposition in a showerhead capacitively coupled plasma (CCP) reactor. The …

We report a new wide‐bandgap p‐type microcrystalline silicon oxycarbide (p‐μc‐SiOxCy: H)
film prepared by plasma‐enhanced chemical vapor deposition. As an additional doping gas …