[图书][B] Physics and applications of dilute nitrides
I Buyanova, W Chen - 2004 - books.google.com
Since their development in the 1990s, it has been discovered that diluted nitrides have
intriguing properties that are not only distinct from those of conventional semiconductor …
intriguing properties that are not only distinct from those of conventional semiconductor …
Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence
T Kageyama, T Miyamoto, S Makino… - Japanese journal of …, 1999 - iopscience.iop.org
The thermal annealing effect on the photoluminescence (PL) characteristics of
GaInNAs/GaAs quantum wells (QWs) grown by chemical beam epitaxy (CBE) using radical …
GaInNAs/GaAs quantum wells (QWs) grown by chemical beam epitaxy (CBE) using radical …
Valence-band splitting and shear deformation potential of dilute alloys
Y Zhang, A Mascarenhas, HP Xin, CW Tu - Physical Review B, 2000 - APS
The valence-band splitting in thin GaAs 1− x N x (0.011<~ x<~ 0. 0 3 3) epilayers strained
coherently by the GaAs substrate is observed in electroreflectance. This study reveals that …
coherently by the GaAs substrate is observed in electroreflectance. This study reveals that …
High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
T Kageyama, T Miyamoto, S Makino… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was …
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was …
Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
We examined quantum wells (QW) consisting of GaInNAs/GaAs grown by chemical beam
epitaxy (CBE) using a radical nitrogen source, and the optical property of grown QWs was …
epitaxy (CBE) using a radical nitrogen source, and the optical property of grown QWs was …
Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
Optical quality of GaNAs and GaInNAs quantum wells and its dependence on RF radical cell
operation in chemical beam epitaxy (CBE) were investigated. It was shown that nitrogen …
operation in chemical beam epitaxy (CBE) were investigated. It was shown that nitrogen …
Nonlinear behaviors of valence-band splitting and deformation potential in dilute alloys
Photoreflectance and piezoreflectance investigations have been performed on a series of
GaNAs layers grown by low-pressure metal-organic chemical vapor deposition on Si-doped …
GaNAs layers grown by low-pressure metal-organic chemical vapor deposition on Si-doped …
GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy
T Miyamoto, S Sato, Z Pan, D Schlenker… - Journal of crystal …, 1998 - Elsevier
The MOCVD growth of GaInNAs/GaAs quantum wells (QWs) using TBAs and DMHy was
studied for realizing long wavelength lasers. In this study, we propose a short-period …
studied for realizing long wavelength lasers. In this study, we propose a short-period …
Comparison of 1300 nm quantum well lasers using different material systems
G Lin, CP Lee - Optical and quantum electronics, 2002 - Springer
The band structure and material gain are calculated for 1300-nm band quantum well lasers
of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each …
of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each …
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-
temperature postgrowth annealing were studied. The QWs were grown using a radio …
temperature postgrowth annealing were studied. The QWs were grown using a radio …