Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Power device breakdown mechanism and characterization: Review and perspective
Breakdown voltage (BV) is arguably one of the most critical parameters for power devices.
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
A survey on the state-of-the-art and future trends of multilevel inverters in BEVs
All electric vehicles are the only way to decarbonize transport quickly and substantially.
Although multilevel inverters have already been used in some transportation modes, they …
Although multilevel inverters have already been used in some transportation modes, they …
Minimizing Output Capacitance Loss in GaN Power HEMT
Q Song, A Briga, V Veprinsky, R Volkov… - … on Power Electronics, 2024 - ieeexplore.ieee.org
Output capacitance (COSS) loss (EDISS) is produced when the COSS of a power device
undergoes a cycle of charging and discharging, which ideally should be a lossless process …
undergoes a cycle of charging and discharging, which ideally should be a lossless process …
High Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
CY Liu, CH Lin, HC Kuo, LC Tang… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This paper attempts to disclose a high-efficiency laser driver which controls laser source for
high-frequency Light Detection and Ranging (LiDAR) applications. The specific LiDAR …
high-frequency Light Detection and Ranging (LiDAR) applications. The specific LiDAR …
GaN MIS-HEMTs in repetitive overvoltage switching: Parametric shift and recovery
The overvoltage and surge energy robustness of GaN power high-electron-mobility
transistors (HEMTs) is a key gap recently identified by the JEDEC JC-70.1 committee. This …
transistors (HEMTs) is a key gap recently identified by the JEDEC JC-70.1 committee. This …
Investigation on Physical Origins of Output Capacitance Loss in Cascode GaN HEMTs
Output capacitance loss is generated when the output capacitor of a power device is
charged and discharged in its OFF state, which ideally should be a lossless process. This …
charged and discharged in its OFF state, which ideally should be a lossless process. This …
SiC and GaN Power Devices
In an increasingly electrified, technology-driven world, power electronics is central to the
entire clean energy manufacturing economy. Power switching semiconductor devices are …
entire clean energy manufacturing economy. Power switching semiconductor devices are …
High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
MD Rahman, ASMK Hasan… - 2024 IEEE 11th …, 2024 - ieeexplore.ieee.org
Gallium Nitride (GaN) is a wide bandgap semiconductor material known for its exceptional
performance in high-temperature and high-voltage environments. This makes GaN a …
performance in high-temperature and high-voltage environments. This makes GaN a …