Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate …
M Zendrini, V Dubrovskii, A Rudra… - ACS Applied Nano …, 2024 - ACS Publications
The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …
The growth direction of nanowires (NWs) can change during synthesis as a result of stochastic processes or modulation of certain growth conditions. This phenomenon is known …
Bottom-up growth offers precise control over the structure and geometry of semiconductor nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures …
The nature of the liquid–solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the …
Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet's liquid–solid interface. Because of the assisting property of the droplet, growth …
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an …
SM Fatemi, SJ Fatemi - Journal of Molecular Graphics and Modelling, 2022 - Elsevier
Interfacial characteristics and wetting behaviors of titanium dioxide surface along with its various morphologies has recently been studied as an important subject. In this paper the …
VA Nebol'sin, EV Levchenko, V Yuryev, N Swaikat - ACS omega, 2023 - ACS Publications
During the nanowire (NW) formation, the growth steps reaching the crystallization front (CF) under the catalytic drop are either absorbed by the three-phase line or accumulated in front …