Semiconductor nanowires: to grow or not to grow?

PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Simultaneous selective area growth of wurtzite and zincblende self-catalyzed GaAs nanowires on silicon

VG Dubrovskii, W Kim, V Piazza, L Güniat… - Nano Letters, 2021 - ACS Publications
Selective area epitaxy constitutes a mainstream method to obtain reproducible
nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate …

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

M Zendrini, V Dubrovskii, A Rudra… - ACS Applied Nano …, 2024 - ACS Publications
The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Kinking in semiconductor nanowires: a review

S Vlassov, S Oras, B Polyakov, E Butanovs… - Crystal Growth & …, 2021 - ACS Publications
The growth direction of nanowires (NWs) can change during synthesis as a result of
stochastic processes or modulation of certain growth conditions. This phenomenon is known …

3D Shape Reconstruction of Ge Nanowires during Vapor–Liquid–Solid Growth under Modulating Electric Field

I Erofeev, K Saidov, Z Baraissov, H Yan, JL Maurice… - ACS …, 2024 - ACS Publications
Bottom-up growth offers precise control over the structure and geometry of semiconductor
nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures …

3D ordering at the liquid–solid polar interface of nanowires

M Zamani, G Imbalzano, N Tappy… - Advanced …, 2020 - Wiley Online Library
The nature of the liquid–solid interface determines the characteristics of a variety of physical
phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the …

Limits of III–V nanowire growth based on droplet dynamics

M Tornberg, CB Maliakkal, D Jacobsson… - The Journal of …, 2020 - ACS Publications
Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of
this droplet's liquid–solid interface. Because of the assisting property of the droplet, growth …

Heterotwin Zn 3 P 2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

SE Steinvall, L Ghisalberti, RR Zamani, N Tappy… - Nanoscale, 2020 - pubs.rsc.org
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next
generation solar cells due to the combination of suitable optoelectronic properties and an …

A comparative study of the wetting behaviors on a rutile TiO2 having different surface morphologies

SM Fatemi, SJ Fatemi - Journal of Molecular Graphics and Modelling, 2022 - Elsevier
Interfacial characteristics and wetting behaviors of titanium dioxide surface along with its
various morphologies has recently been studied as an important subject. In this paper the …

About the Shape of the Crystallization Front of the Semiconductor Nanowires

VA Nebol'sin, EV Levchenko, V Yuryev, N Swaikat - ACS omega, 2023 - ACS Publications
During the nanowire (NW) formation, the growth steps reaching the crystallization front (CF)
under the catalytic drop are either absorbed by the three-phase line or accumulated in front …