The direction and impact parameter dependence of electronic stopping power, along with its
velocity threshold behavior, is investigated in a prototypical small-band-gap semiconductor …

Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …

Using first-principles calculations, based on the density functional theory, we have
investigated the mechanical and electronic properties of hydrogen-passivated 3C-, 2H-, 4H …

We investigate the effect of surface passivation on the mechanical properties of InAs and InP
nanowires (NWs) as a function of diameter using density-functional theory. The …

This paper reports a diameter-independent Young's modulus of 91.9±8.2 GPa for [111]
Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a …

Real space pseudopotentials have a number of advantages in solving for the electronic
structure of materials. These advantages include ease of implementation, implementation on …

The control and modulation of the electronic properties of silicon carbide nanowires
(SiCNWs) are crucial for the obtention of materials with specific electronic features for the …

We have studied strain governed electronic structure and transport properties of Si nanowire
(SiNW) and Ge nanowire (GeNW) utilizing generalized gradient approximation (GGA) of …

We calculate the electronic structures of Germanium nanowires by taking the effective-mass
theory. The electron and hole states at the Γ-valley are studied via the eight-band kp theory …

We calculate the electronic structures of Ge nanowires at the direct Γ-valley and indirect L-
valley under the [100] direction uniaxial stress perpendicular to the nanowire axis using the …