A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
Hydrogen (H 2) has been widely used in H 2 fuelled vehicles, semiconductor fabrication,
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
In this paper, the RF and DC performance of AlGaN/GaN HEMT having p-type doping in
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
AS Augustine Fletcher, D Nirmal… - … Journal of RF and …, 2020 - Wiley Online Library
Abstract The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD
K Chen, Y Zhang, J Zhang, X Wang, Y Yao, J Ma… - Ceramics …, 2022 - Elsevier
Abstract High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN
buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …
buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …
Design and analysis of a symmetrical Low-κ source-side spacer multi-gate Nanowire device
Y Gowthami, B Balaji, KS Rao - Journal of Electronic Materials, 2023 - Springer
In this paper, we propose a symmetrical low-κ source-side spacer multi-gate nanowire
device design and analysis. High-κ spacer materials are currently researched extensively for …
device design and analysis. High-κ spacer materials are currently researched extensively for …
A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
JSR Kumar, HV Du John, IV BinolaKJebalin… - Microelectronics …, 2023 - Elsevier
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT
The performance comparison and the temperature profile of AlGaN/GaN HEMT on different
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …