Residual stress is a long-standing issue in thin film growth. Better understanding and control
of film stress would lead to enhanced performance and reduced failures. In this work, we …

Polycrystalline thin films on substrates usually are in a “stressed” state. In the present paper,
recent results on stress in polycrystalline films will be reviewed. For Cr and CrN films, it has …

With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

Residual stress is a longstanding problem in thin film growth that affects film performance
and limits the range of applicability. A better understanding of why this stress develops and …

Materials synthesized by deposition techniques are often plagued by high levels of residual
stress. While the origin and control of this stress in thin (sub-micron) films has been an active …

We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …

Nanocrystalline alloy thin films offer a variety of attractive properties, such as high hardness,
strength and wear resistance. A disadvantage is the large residual stresses that result from …

The potential advantages of lithium metal anodes have received widespread attention
(highest capacity, lowest reduction potential, etc). However, the poor stability of Li …

Ti-Cr-N coatings were deposited on Si (100) and AISI D2 tool steel substrates by reactive
DC magnetron co-sputtering technique from titanium and chromium target in mixed Ar/N 2 …

GaN based epitaxy on silicon usually requires strain-engineering methods to avoid tensile
stress after cooling from growth temperature. Silicon doping of GaN induces additional …