GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications
S Samanta - Journal of Semiconductors, 2023 - iopscience.iop.org
This review article discusses the development of gallium arsenide (GaAs)-based resonant
tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first …
tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first …
Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection
We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant
tunneling diodes with pseudomorphically grown prewell emitter structures comprising the …
tunneling diodes with pseudomorphically grown prewell emitter structures comprising the …
Increased peak current in AlAs/GaAs resonant tunneling structures with GaInAs emitter spacer
YW Choi, CR Wie - Journal of applied physics, 1992 - pubs.aip.org
Self‐consistent simulation results are presented for the symmetric barrier AlAs/GaAs/AlAs
resonant tunneling structures with a GaInAs emitter spacer well [Appl. Phys. Lett. 58, 1077 …
resonant tunneling structures with a GaInAs emitter spacer well [Appl. Phys. Lett. 58, 1077 …
Designing resonant tunneling structures for increased peak current density
CR Wie, YW Choi - Applied physics letters, 1991 - pubs.aip.org
We report a simple method to increase the peak current density in a double‐barrier resonant
tunneling structure by using a small band‐gap emitter spacer layer. We have fabricated …
tunneling structure by using a small band‐gap emitter spacer layer. We have fabricated …
Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature
Highly strained In0. 33Ga0. 67As/AlAs‐based resonant tunneling diodes have been
fabricated on GaAs (100) substrates without the use of thick strain relieving buffer layers …
fabricated on GaAs (100) substrates without the use of thick strain relieving buffer layers …
Resonant electron capture in As/AlAs/GaAs quantum wells
Resonant electron capture in Al x Ga 1− x As/AlAs/GaAs quantum-well structures is
systematically investigated by means of both continuous-wave and time-resolved …
systematically investigated by means of both continuous-wave and time-resolved …
[HTML][HTML] Design and realization of resonant tunneling diodes with new material structure
W Jianlin, W Liangchen, Z Yiping, L Zhongli… - Chinese Journal of …, 2005 - jos.ac.cn
A new material structure with Al0. 22Ga0. 78As/In0. 15Ga0. 85As/GaAs emitter spacer layer
and GaAs/In0. 15Ga0. 85As/GaAs well for resonant tunneling diodes is designed and the …
and GaAs/In0. 15Ga0. 85As/GaAs well for resonant tunneling diodes is designed and the …
Resonant tunneling structures with local potential perturbations
L Burgnies, O Vanbesien, V Sadaune… - Journal of applied …, 1994 - pubs.aip.org
Self-consistent SchrSdinger-Poisson model has been used to handle band-bending effects
in resonant tunneling heterostructures with local potential perturbations. Simulation results …
in resonant tunneling heterostructures with local potential perturbations. Simulation results …
InyGa1−yAs/InyAl1−yAs resonant tunneling diodes on GaAs
E Wolak, JC Harmand, T Matsuno, K Inoue… - Applied physics …, 1991 - pubs.aip.org
Resonant tunneling diodes are fabricated using In y Ga1− y As/In y Al1− y As on GaAs
substrates for the first time. The devices showed increasing peak current density as the In …
substrates for the first time. The devices showed increasing peak current density as the In …
Fabrication of high-performance Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As/GaAs resonant tunneling diodes using a microwave-compatible technology
D Lippens, E Barbier, P Mounaix - IEEE electron device letters, 1991 - ieeexplore.ieee.org
A microwave-compatible process for fabricating planar integrated resonant tunneling diodes
(RTDs) is described. High-performance RTDs have been fabricated using Al/sub x/Ga/sub 1 …
(RTDs) is described. High-performance RTDs have been fabricated using Al/sub x/Ga/sub 1 …