Molecular dynamics (MD) simulations were conducted to investigate the temperature effects
on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from …

In this work, we have carried out a series of displacement cascade simulations in tungsten
(W), including seven different primary-knock-on atom (PKA) directions, and PKA energy …

Admittance spectroscopy combined with non-ionizing energy loss (NIEL) analysis is shown
to be a powerful tool for analyzing solar cell radiation degradation, not relying on the change …

We have employed large-scale molecular dynamics simulations to study defect production,
clustering, and its evolution in GaN for energies of a primary knock-on atom ranging from …

Understanding the generation and evolution of defects induced in matter by ion irradiation is
of fundamental importance to estimate the degradation of functional properties of materials …

A molecular dynamics (MD) method, along with the analytical bond-order potential, is
applied to study defect production in InAs. This potential is modified to obtain a better …

Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs)
under different temperatures (300–900 K). During the entire simulation, the primary knock …

The threshold displacement energy of Fe and Fe-Cr-Al alloys and the influence factors were
investigated using molecular dynamic simulations. The mechanism of defect recombination …

During the MURI performance period we completed a diverse portfolio of world-class
research projects. We made remarkable progress in all major topics encompassed by the …

The damage induced in GaAs crystals irradiated with dual-ion beam (low-energy I 2+ and
high-energy Fe 9+), producing simultaneous nuclear (S n) and electronic (S e) energy …