A review on conductive common-mode EMI suppression methods in inverter fed motor drives

Z Zhang, Y Hu, X Chen, GW Jewell, H Li - IEEE Access, 2021 - ieeexplore.ieee.org
The impact of electromagnetic interference (EMI) is an increasingly important aspect of the
performance of switching inverters. The challenges of managing EMI continue to grow with …

An integrated gate driver based on SiC MOSFETs adaptive multi-level control technique

J Cao, ZK Zhou, Y Shi, B Zhang - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …

On-chip active turn-off driving technique to prevent channel current from disappearing prematurely in SiC MOSFET's applications

J Cao, ZK Zhou, Y Shi, B Zhang - IEEE Transactions on Circuits …, 2022 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFET has significant advantages in high-voltage (HV) and high-
frequency (HF) applications due to its electrical characteristics. In order to make use of its …

Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme

Y Zhang, Q Song, X Tang, Y Zhang - Journal of Power Electronics, 2020 - Springer
In this paper, a SiC MOSFETs gate driver for parallel connections is proposed and
implemented. The proposed design enhances the reliability of parallel-connected SiC …

Conductive Common-Mode EMI Suppressing Methods in Inverter Fed Motor Drives

Y Hu, X Chen - Emerging Technologies for Electric and Hybrid …, 2024 - Springer
The impact of electromagnetic interference (EMI) is an increasingly important aspect of the
performance of switching inverters. The challenges of managing EMI continue to grow with …

Design techniques of gate driver for SiC MOSFET's applications

Z Zhou, J Cao, B Zhang - 2021 IEEE 14th International …, 2021 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFET has a wide range of applications in high voltage, high
frequency due to its small parasitic characteristics. However, the traditional gate driver …

Minimization of dead time effect on bridge converter output voltage quality by use of advanced gate drivers

HL Hove, OC Spro, D Peftitsis, G Guidi… - … Conference on Power …, 2019 - ieeexplore.ieee.org
This paper presents a voltage-controlled multistage gate driver topology for delay time
minimization that improves the converter output voltage quality while supplying a motor load …

A New Method of The Active Gate Driver for Current Balancing in The Parallel MOSFET Circuits

ME Sulistyo, S Kaleg, DA Waskitho, R Ristiana… - 2023 - catalog.lib.kyushu-u.ac.jp
MOSFETs are used in electronic circuits because they have high switching efficiency.
Typically, MOSFETs are wired in parallel for applications that require high power …

Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET

MH Jiang, CL Wu, CH Huang - 2023 IEEE Workshop on Wide …, 2023 - ieeexplore.ieee.org
Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications
having a high voltage, high temperature operating circumstance such as electric vehicle. To …

실리콘카바이드모스펫의근사모델에의한스위칭과도현상분석및전력변환응용

김재석 - 2018 - s-space.snu.ac.kr
최근 실리콘 카바이드 (Silicon Carbide, SiC) 를 이용한 MOSFET 과 쇼트키 다이오드가 생산,
판매되고 있다. 실리콘보다 우수한 실리콘 카바이드의 전기적 물성으로 인해 SiC MOSFET 과 …