Insights into the operation of negative capacitance FinFET for low power logic applications
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …
performance matrix of emerging electronic devices are being explored inevitably to find the …
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film
In this letter, we proposed and experimentally demonstrated a metal-insulator-
semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By …
semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By …
On the resiliency of NCFET circuits against voltage over-scaling
Approximate computing is established as a design alternative to improve the energy
requirements of a vast number of applications, leveraging their intrinsic error tolerance …
requirements of a vast number of applications, leveraging their intrinsic error tolerance …
Junction design and complementary capacitance matching for NCFET CMOS logic
Negative capacitance field effect transistors (NCFETs) are modeled in this study, with an
emphasis on junction design, implications of complementary logic, and device V t menu …
emphasis on junction design, implications of complementary logic, and device V t menu …
Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2
We experimentally investigated the dependence of ferroelectricity in Al-doped HfO 2 (HAO)
films on the annealing temperatures ranging from 600° C to 800° C. Increasing the …
films on the annealing temperatures ranging from 600° C to 800° C. Increasing the …
Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor
Electronic synapses with both long-term and short-term plasticity are considered as
significant components for constructing brain-inspired computing systems. Research …
significant components for constructing brain-inspired computing systems. Research …
Real-Time Polarization Switch Characterization of HfZrO4 for Negative Capacitance Field-Effect Transistor Applications
In this letter, the real-time polarization switching process in HfZrO 4 ferroelectric film is
investigated at high speed (100 MHz, highest up-to-date) by using the ultrafast …
investigated at high speed (100 MHz, highest up-to-date) by using the ultrafast …
Hybrid design using metal–oxide–semiconductor field-effect transistors and negative-capacitance field-effect transistors for analog circuit applications
In this work, novel hybrid circuits based on metal–oxide–semiconductor field-effect
transistors (MOSFETs) and negative-capacitance field-effect transistors (NC-FETs) were …
transistors (MOSFETs) and negative-capacitance field-effect transistors (NC-FETs) were …
Toward microwave S-and X-parameter approaches for the characterization of ferroelectrics for applications in FeFETs and NCFETs
ZC Yuan, PS Gudem, M Wong, JK Wang… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Ferroelectric and negative-capacitance field-effect transistors (FeFETs and NCFETs) have
recently garnered great attention as devices for applications in memory and low-power logic …
recently garnered great attention as devices for applications in memory and low-power logic …
Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor
S Guo, X Kong, H Guo - Science China Physics, Mechanics & Astronomy, 2024 - Springer
For the in-memory computation architecture, a ferroelectric semiconductor field-effect
transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic …
transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic …