Performance comparison of vertically stacked nanosheet CFET and standard CMOS without and with parasitic channels
J Li, M Zhao, H Lu, Y Zhang - Microelectronic Engineering, 2023 - Elsevier
The threshold voltage regulation and the effect of parasitic channels are important issues in
CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) …
CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) …
Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p-and n-MOSFETs
R Su, Z Chen, M Ke, D Gao… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The mobility scattering mechanisms in the ultra-thin-body (UTB) Ge-OI p-and n-MOSFETs
have been systematically investigated. It is found that the dependence is confirmed for the …
have been systematically investigated. It is found that the dependence is confirmed for the …
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion
J Jeong, SK Kim, YJ Suh, J Shim… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Heterogenous and monolithic 3-D (M3D) integration of III–V RF devices on Si CMOS is a
very attractive technology for future wireless communication systems. However, the self …
very attractive technology for future wireless communication systems. However, the self …
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs
In this study, we report on the fabrication and characterization of 3-D sequential
complementary field-effect-transistors (CFETs) using the direct wafer bonding (DWB) …
complementary field-effect-transistors (CFETs) using the direct wafer bonding (DWB) …
Exploring Sheet Thickness Scaling and Substrate Orientation for Maximizing Nanosheet pFET Performance
R Kaur, NR Mohapatra - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
We explored the performance of p-type nanosheet FETs (NsFETs) with sheet thickness
scaling using a well-calibrated subband BTE solver that accounts for quantum confinement …
scaling using a well-calibrated subband BTE solver that accounts for quantum confinement …
Complementary FET-The Future of the Semiconductor Transistor
SH Kim, SH Lee, WJ Lee, JW Park… - Electronics and …, 2023 - koreascience.kr
With semiconductor scaling approaching the physical limits, devices including CMOS
(complementary metal-oxide-semiconductor) components have managed to overcome yet …
(complementary metal-oxide-semiconductor) components have managed to overcome yet …