Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …

The development of three-dimensional architectures in semiconductor technology is paving
the way to new device concepts for various applications, from quantum computing to single …

Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

3C-SiC is a promising material for low-voltage power electronic devices but its growth is still
challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable …

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs
epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the …

The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si (111),
causing severe wafer bending and cracking, is demonstrated to be elastically quenched by …

The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch,
thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we …

This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on
patterned Si and grown up to extreme heights of 40 and 100 µm using the rocking curve …

A study was conducted to evaluate the effect of nano-silica (NS) content on the strength and
cytotoxicity of calcium-silicate-based root canal filling materials. In this experimental …