Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

On-chip integration of optical comb sources is crucial in enabling their widespread use.
Integrated photonic devices that can be mass-manufactured in semiconductor processing …

Silicon based InAs quantum dot mode locked lasers (QD-MLLs) are promising to be
integrated with silicon photonic integrated circuits (PICs) for optical time division multiplexing …

We demonstrate, for the first time, a single section passively mode‐locked InAs/InGaAs
quantum dot laser directly grown on on‐axis (001) GaP/Si substrate. The laser has a …

This paper describes a theory for mode locking and frequency comb generation by four-
wave mixing in a semiconductor quantum-dot active medium. The derivation uses a …

Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is
promising as it offers high wavelength channel counts and ultrashort pulses that will benefit …

Three longitudinal mode oscillation states and their corresponding pulse characteristics
were obtained by exploiting the etalon effect in a self-mode-locked (SML) laser. Various …

The spatial hole burning (SHB) effect on the mode-locking characteristics of Nd: YVO 4 self-
mode-locked (SML) lasers are investigated. By varying the cavity length, pump power, and …

We exploit slow light (high ng) modes in planar photonic crystals in order to design a
compact cavity, which provides an attractive path towards the miniaturization of near-infrared …

The concept of quantum dot (QD) lasers and their advantages were predicted in the 1980s,
and considerable efforts have been devoted to developing high-performance QD lasers. The …